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2001-06-01, Strained Silicon Heterostructures: Materials and Devices (IEE Circui
relationship in strained silicon nanomembranes. by Cha
Relationship in Strained Silicon Nanomembranes. - Euar
Properties of Strained 3c-Silicon Carbide/Silicon Heterostructure
and Numerical Verification of P-Channel Strained Silicon-G
a Strained Silicon-Germanium Channel Pmosfet Integrable in an
Strained-Layer Epitaxy for Silicon Heterostructure Devices by...
Layers and Heterostructures:
Analytical Design and Numerical Verification of P-Channel Strained Silicon-G...